sot223 npn silicon planar high voltage transistor issue 4 - january 1996 j features: *high v ceo and low saturation voltage applications: * suitable for video output stages in tv sets * switching power supplies complementary type - bfn37 partmarking details - bfn36 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 250 v collector-emitter voltage v ceo 250 v emitter-base voltage v ebo 5v continuous collector current i c 500 ma power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 250 v i c =100 m a collector-emitter breakdown voltage v (br)ceo 250 v i c =1ma emitter-base breakdown voltage v (br)ebo 5v i e =100 m a collector cut-off current i cbo 100 20 na m a v cb =200v v cb =200v, t amb =150c emitter cut-off current i ebo 100 na v eb =4v collector-emitter saturation voltage v ce(sat) 0.4 v i c =20ma, i b =2ma base-emitter saturation voltage v be(sat) 0.9 v i c =20ma, i b =2ma static forward current transfer ratio h fe 25 40 40 i c =1ma, v ce =10v* i c =10ma, v ce =10v* i c =30ma, v ce =10v* transition frequency f t 70 mhz i c =20ma, v ce =10v f=100mhz output capacitance cobo 1.5 pf v cb =30v,f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% for typical characteristics graphs see fmmta42 datasheet. bfn36 c c e b 3 - 46
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